Active matrix display device

ABSTRACT

In order to provide an active matrix display device in which a thick insulating film is preferably formed around an organic semiconductive film of a thin film luminescent device without damaging the thin film luminescent device, the active matrix display device is provided with a bank layer (bank) along a data line (sig) and a scanning line (gate) to suppress formation of parasitic capacitance in the data line (sig), in which the bank layer (bank) surrounds a region that forms the organic semiconductive film of the thin film luminescent device by an ink-jet process. The bank layer (bank) includes a lower insulating layer formed of a thick organic material and an upper insulating layer of an organic material which is deposited on the lower insulating layer and has a smaller thickness so as to avoid contact of the organic semiconductive film with the upper insulating layer.

BACKGROUND OF THE INVENTION

[0001] 1. Field of the Invention

[0002] The present invention relates to active matrix display deviceswhich control thin film luminescent devices, such as electroluminescent(EL) devices emitting light by a driving current flowing in an organicsemiconductive film, and light-emitting diode (LED) devices using thinfilm transistors (hereinafter referred to as TFTs).

[0003] 2. Description of Related Art

[0004] Active matrix display devices using current-control-typeluminescent devices, such as EL devices or LED devices, have beenproposed. The fact that luminescent devices used in such types ofdisplay devices have self-luminescent functions provides advantages,such as obviating installation of a backlight, whereas backlights areessential for liquid crystal display devices, and providing a widerviewing angle.

[0005]FIG. 22 is a block diagram of an active matrix display deviceusing charge-injection-type organic EL devices. In the active matrixdisplay device 1A shown in the drawing, a plurality of scanning linesgate, a plurality of data lines sig extending in a directionperpendicular to a direction of extension of the scanning lines gate, aplurality of common feed lines com extending along the data lines sig,and a plurality of pixels 7 in a matrix formed by the data lines sig andthe scanning lines gate, are formed on a transparent substrate 10.

[0006] A data line driving circuit 3 and a scanning line driving circuit4 are provided for the data lines sig and the scanning lines gate,respectively. Each pixel 7 is provided with a conduction control circuit50 for supplying scanning signals from a scanning line gate, and a thinfilm luminescent device 40 emitting based on image signals supplied froma data line sig through the conduction control circuit 50.

[0007] In this example, the conduction control circuit 50 has a firstTFT 20 for supplying scanning signals from the scanning line gate to agate electrode; a holding capacitor cap for holding image signalssupplied from the data line sig through the first TFT 20; and a secondTFT 30 for supplying the image signals held in the holding capacitor capto the gate electrode. The second TFT 30 and the thin film luminescentdevice 40 are connected in series between an opposite electrode op(described below) and a common feed line com. The thin film luminescentdevice 40 emits light by a driving current from the common feed line comwhen the second TFT 30 is in an ON mode, and this emitting mode ismaintained by a holding capacitor cap for a predetermined time.

[0008] In such a configuration of an active matrix display device 1A, asshown in FIGS. 23, 24(A), and 24(B), the first TFT 20 and the second TFT30 are formed of islands of a semiconductive film in each pixel 7. Thefirst TFT 20 is provided with a gate electrode 21 as a part of ascanning line gate. In the first TFT 20, one source-drain region iselectrically connected to a data line sig through a contact hole in afirst insulating interlayer 51, and the other region is connected to adrain electrode 22. The drain electrode 22 extends towards the region ofthe second TFT 30, and this extension is electrically connected to agate electrode 31 of the second TFT 30 through a contact hole in thefirst insulating interlayer 51. One source-drain region of the secondTFT 30 is electrically connected to a relay electrode 35 through acontact hole of the first insulating interlayer 51, and the relayelectrode 35 is electrically connected to a pixel electrode 41 of thethin film luminescent device 40 through a contact hole in a secondinsulating interlayer 52.

[0009] Each pixel electrode 41 is independently formed in each pixel 7,as shown in FIGS. 23, 24(B), and 24(C). An organic semiconductive film43 and an opposite electrode op are formed above the pixel electrode 41in that order. Although the organic semiconductive film 43 is formed ineach pixel 7, a stripe film may be formed over a plurality of pixels 7.The opposite electrode op is formed not only in a display section 11including pixels 7, but also over the entire surface of the transparentsubstrate 10.

[0010] With reference to FIGS. 23 and 24(A) again, the othersource-drain region of the second TFT 30 is electrically connected tothe common feed line com through a contact hole in the first insulatinginterlayer 51. An extension 39 of the common feed line com faces anextension 36 of the gate electrode 31 in the second TFT 30 separated bythe first insulating interlayer 51 as a dielectric film to form aholding capacitor cap.

[0011] In the active matrix display device 1A, however, only the secondinsulating interlayer 52 is disposed between the opposite electrode opfacing the pixel electrode 41 and the data line sig on the sametransparent substrate 10, which is unlike liquid crystal active matrixdisplay devices; hence, a large capacitance is formed in the data linesig, and the data line driving circuit 3 is heavily loaded.

[0012] Accordingly, as shown in FIGS. 22, 23, 25(A), 25(B), and 25(C),the present inventors propose a reduction in parasitic capacitance inthe data line sig by providing a thick insulating film (a bank layerbank; the region shaded with lines slanting downward to the left at awide pitch) between the opposite electrode op and the data line sig.Furthermore, the present inventors propose that the region for formingthe organic semiconductive film 43 be surrounded with the insulatingfilm (bank layer bank) to block a solution discharged from an ink-jethead and to prevent bleeding of the solution towards sides in theformation of the organic semiconductive film 43.

[0013] When the entire bank layer bank is formed of a thick inorganicmaterial in adoption of such a configuration, a problem of a prolongedfilm forming time arises. When the thick inorganic film is patterned,the pixel electrode 41 may be damaged due to overetching. On the otherhand, when the bank layer bank is formed of an organic material, such asa resist, the organic semiconductive film 43 may deteriorate at theboundary between the organic semiconductive film 43 and the bank layerbank by the effects of the solvent components contained in the organicmaterial in the bank layer bank.

[0014] Since formation of a thick bank layer bank causes formation of alarge step difference bb, the opposite electrode op formed above thebank layer bank readily breaks on the step difference bb. Such breakageof the opposite electrode op due to the step difference bb causesinsulation of the opposite electrode op from the neighboring oppositeelectrodes op to form point or linear defects in the display. When theopposite electrode op breaks along the outer periphery of the bank layerbank which covers the surfaces of the data line driving circuit 3 andthe scanning line driving circuit 4, the opposite electrode op in thedisplay section 11 is completely insulated from a terminal 12 and thusno image is displayed.

SUMMARY OF THE INVENTION

[0015] Accordingly, it is an object of the present invention in view ofthe above problems to provide an active matrix display device, withoutdamage of thin film luminescent devices, having a thick insulating filmsatisfactorily formed around an organic semiconductive film in the thinfilm luminescent devices.

[0016] It is another object of the present invention to provide anactive matrix display device without breakage of an opposite electrodeformed on a thick insulating film which is formed around an organicsemiconductive film to reduce parasitic capacitance.

[0017] The present invention for solving the above-mentioned problems ischaracterized by an active matrix display device comprising a displayregion including a plurality of scanning lines on a substrate, aplurality of data lines extending in a direction perpendicular to adirection of extension of the scanning lines, and a plurality of pixelsarranged in a matrix bounded by the data lines and the scanning lines;each of the pixels being provided with a thin film luminescent devicehaving a conduction control circuit containing a thin film transistorthat supplies a scanning signal to a gate electrode through one of thescanning lines, a pixel electrode, an organic semiconductive filmdeposited above the pixel electrode, and an opposite electrode depositedabove the organic semiconductive film; the thin film luminescent deviceemitting light based on an image signal supplied from the data linethrough the conduction control circuit; wherein the region that formsthe organic semiconductive film is divided by an insulating film whichis thicker than the organic semiconductive film; and the insulating filmcomprises a lower insulating layer which is formed of an inorganicmaterial and is thicker than the organic semiconductive film, and anupper insulating layer which is deposited on the lower insulating layerand is formed of an organic material.

[0018] In the present invention, the data line will form large parasiticcapacitance if the opposite electrode is formed on the entire surface ofthe display section to face the data line; however, a thick insulatingfilm is provided between the data line and the opposite electrode in thepresent invention to prevent formation of the parasitic capacitance inthe data line. As a result, a load on the data line driving circuit isreduced, and low energy consumption and high-speed display operation areachieved. If the thick insulating film is formed of only an inorganicmaterial, a long film deposition time is required, resulting in lowproductivity. In the present invention, only the lower insulating layerin contact with the organic semiconductive film of the thin filmluminescent device is formed of an inorganic material, and an upperinsulating layer that includes an organic material, such as a resist, isformed thereon. Improved productivity is provided, since the upperinsulating layer formed of an organic material facilitates formation ofa thick film. The upper insulating layer does not come into contact withthe organic semiconductive film, but the lower insulating layer formedof an inorganic material does come into contact with the organicsemiconductive film; hence, the organic semiconductive film is protectedfrom deterioration affected by the upper insulating layer. Accordingly,the thin film luminescent device does not cause decreased luminescentefficiency or reliability.

[0019] It is preferable in the present invention that the upperinsulating layer be deposited in an inner region of the lower insulatinglayer so as to have a width narrower than that of the upper insulatinglayer. Such a two-step configuration prevents contact of the upperinsulating layer formed of an organic material with the organicsemiconductive film; hence deterioration of the organic semiconductivefilm can be more securely prevented. In such a two-step configuration,both the lower insulating layer and the upper insulating layer may beformed of inorganic materials.

[0020] Another aspect of the present invention is an active matrixdisplay device comprising a display region including a plurality ofscanning lines on a substrate, a plurality of data lines extending in adirection perpendicular to a direction of extension of the scanninglines, and a plurality of pixels arranged in a matrix bounded by thedata lines and the scanning lines; each of the pixels being providedwith a thin film luminescent device having a conduction control circuitcontaining a thin film transistor that supplies a scanning signal to agate electrode through one of the scanning lines, a pixel electrode, anorganic semiconductive film deposited above the pixel electrode, and anopposite electrode deposited above the organic semiconductive film; thethin film luminescent device emitting light based on an image signalsupplied from the data line through the conduction control circuit;wherein the region that forms the organic semiconductive film is dividedby an insulating film which is thicker than the organic semiconductivefilm; and the insulating film comprises a lower insulating layer formedof an inorganic material, and an upper insulating layer, formed of aninorganic material, so as to have a width which is narrower than that ofthe lower insulating layer.

[0021] In such a configuration, after films formed of inorganicmaterials, constituting a lower insulating layer and an upper insulatinglayer, are formed, the upper insulating layer is patterned. Since thelower insulating layer functions as an etching stopper, the pixelelectrodes will not be damaged by slight overetching. After thepatterning, the lower insulating layer is patterned. Since only onelayer of the lower insulating layer is etched, the etching is readilycontrolled so that overetching, which would damage the pixel electrodes,does not occur.

[0022] It is preferable in the present invention that the conductioncontrol circuit be provided with a first TFT that supplies the scanningsignal to the gate electrode, and a second TFT of which the gateelectrode is connected to the data line through the first TFT, and thatthe second TFT and the thin film luminescent device be connected inseries between a common feed line formed in addition to the data lineand the scanning line supplying a drive current and the oppositeelectrode. Although the conduction control circuit can be formed of aTFT and a holding capacitor, the conduction control circuit of eachpixel is preferably formed of two TFTs and two holding capacitors toimprove display quality.

[0023] It is preferable in the present invention that the insulatingfilm be used as a bank layer which prevents bleeding of a dischargedsolution when the organic semiconductive film is formed by an ink-jetprocess in a region delimited by the insulating film. The insulatingfilm preferably has a thickness of 1 μm or more.

[0024] It is preferable in the present invention that a region,overlapping the area that forms the conduction control circuit in theregion that forms the pixel electrode, be covered with the insulatingfilm. That is, it is preferable that among the region that forms thepixel electrode, the thick insulating film be opened only at the flatsection not having the conduction control circuit and the organicsemiconductive film be formed only at the interior thereof. Such aconfiguration can prevent display irregularities due to an irregularthickness of the organic semiconductive film.

[0025] A thinner section of the organic semiconductive film causes aconcentration of the driving current of the thin film luminescent deviceand decreased reliability; however, this configuration can prevent sucha problem. If the organic semiconductive film emits light due to adriving current between a pixel electrode and the opposite electrode inthe region overlapping the conduction control circuit, the light isshielded by the conduction control circuit and does not contribute todisplay. The driving current not contributing to display by theshielding effect of the conduction control circuit is an unavailablecurrent.

[0026] In the present invention, the thick insulating film is formed atthe section, in which such an unavailable current is expected, toprevent formation of the unavailable current. As a result, a current inthe common feed line can be reduced. Thus, by reducing the width of thecommon feed line, a luminescent area can be increased, improving displaycharacteristics, such as luminance and contrast.

[0027] In the present invention, the corners bounded by the insulatingfilm may be rounded so that the organic semiconductive film has arounded planar shape. The organic semiconductive film having such ashape avoids the concentration of the driving current at the corners,hence defects, such as insufficient voltage resistance, can be preventedat the corners.

[0028] When the organic semiconductive film having a striped pattern isformed, the lower insulating layer of the insulating film is formed soas to cover the area for forming the conduction control circuit in theregion that forms the pixel electrode, the data line, the common feedline, and the scanning line, whereas the upper insulating layer isformed so as to form a striped pattern along the data line, and theorganic semiconductive film is formed in the region bounded by thestriped pattern of the upper insulating layer by, for example, anink-jet process.

[0029] In such a configuration, the conduction control circuit iscovered with the lower insulating layer so that only the organicsemiconductive film formed at the flat section of the pixel electrodecontributes to luminescence. That is, the thin film luminescent deviceis formed only at the flat section of the pixel electrode. Thus, theresulting organic semiconductive film has a constant thickness and doesnot display irregularities. Since the lower insulating layer prevents adriving current in the section not contributing to display, anunavailable current in the common feed line can be prevented.

[0030] In such a configuration, the section in which the lowerinsulating layer overlaps the upper insulating layer can be used as abank layer to prevent bleeding of a discharged solution when the organicsemiconductive film is formed by an ink-jet process. When the insulatingfilm is used as a bank layer, the overlapping section of the lowerinsulating layer and the upper insulating layer preferably has athickness of 1 μm or more.

[0031] It is preferable in the present invention that the insulatingfilm have a first discontinuities portion so that opposite electrodes ofadjacent pixels are connected to each other at flat sections formed bythe first discontinuities portion. The thick insulating film in thepresent invention may form a large step which causes breakage of theopposite electrode formed thereon; however, the first discontinuitiesportion formed at predetermined positions of the thick insulating filmare planarized. Since the opposite electrodes of individual regions areelectrically connected to each other at the flat sections correspondingto the first discontinuities portion, the opposite electrodes areprotected from breakage even if breakage occurs at the step due to theinsulating film. Since breakage of the opposite electrode formed abovethe insulating film does not occur when a thick insulating film isformed around the organic semiconductive film to suppress the parasiticcapacitance, display quality and reliability of the active matrixdisplay device can be improved.

[0032] When the insulating film is formed along the data line and thescanning line so as to surround the region that forms the organicsemiconductive film, the first discontinuities portion are preferablyformed between the adjacent pixels in the direction of the extendingdata line, between the adjacent pixels in the direction of the extendingscanning line, or between the adjacent pixels in these directions.

[0033] When the insulating film extends in a striped pattern along thedata line, the first discontinuity may be formed on at least one end ofthe extending direction.

[0034] It is preferable in the present invention that the periphery ofthe display section be provided with a data line driving circuit thatsupplies data signals through the data lines, and a scanning linedriving circuit that supplies scanning signals through the scanninglines, that the insulating film be also formed above the scanning linedriving circuit and the data line driving circuit, and that theinsulating film have a second discontinuity at a position between theregion that forms the scanning line driving circuit and the region forforming the data line driving circuit so that the opposite electrodes atthe display section and at the peripheral section of the substrate areconnected through the flat section. Even if breakage of the oppositeelectrodes occurs along the periphery of the insulating film whichcovers the data line driving circuit and the scanning line drivingcircuit, the opposite electrode at the display section is connected tothe opposite electrode at the periphery of the substrate via the flatsection, and thus electrical connection between these opposite electrodecan be ensured.

[0035] In the discontinuity of the present invention, both the lowerinsulating layer and the upper insulating layer may have thediscontinuity, or only the upper insulating layer among the upperinsulating layer and the lower insulating layer may have thediscontinuity.

BRIEF DESCRIPTION OF THE DRAWINGS

[0036]FIG. 1 is a schematic block diagram of an overall layout of anactive matrix display device in accordance with a first embodiment ofthe present invention;

[0037]FIG. 2 is a plan view of a pixel of the active matrix displaydevice shown in FIG. 1;

[0038] FIGS. 3(A), 3(B) and 3(C) are cross-sectional views taken fromline A-A′, B-B′, and CC′, respectively, in FIG. 2;

[0039] FIGS. 4(A), 4(B) and 4(C) are cross-sectional views of activematrix display devices in accordance with a second embodiment and athird embodiment of the present invention at positions corresponding toline A-A′, B-B′, and C-C′, respectively, in FIG. 2;

[0040]FIG. 5 is a plan view of a pixel of an active matrix displaydevice in accordance with a fourth embodiment of the present invention;

[0041] FIGS. 6(A), 6(B) and 6(C) are cross-sectional views taken fromline A-A′, B-B′, and CC′, respectively, in FIG. 5;

[0042]FIG. 7 is a schematic block diagram of an overall layout of anactive matrix display device in accordance with a fifth embodiment ofthe present invention;

[0043]FIG. 8 is a plan view of a pixel of the active matrix displaydevice shown in FIG. 7;

[0044] FIGS. 9(A), 9(B) and 9(C) are cross-sectional views taken fromline A-A′, B-B′, and CC′, respectively, in FIG. 8;

[0045]FIG. 10 is a schematic block diagram of an overall layout of anactive matrix display device in accordance with a first modification ofthe fifth embodiment of the present invention;

[0046]FIG. 11 is a plan view of a pixel of the active matrix displaydevice shown in FIG. 10;

[0047] FIGS. 12(A), 12(B) and 12(C) are cross-sectional views taken fromline A-A′, B-B′, and C-C′, respectively, in FIG. 11;

[0048]FIG. 13 is a schematic block diagram of an overall layout of anactive matrix display device in accordance with a second modification ofthe fifth embodiment of the present invention;

[0049]FIG. 14 is a plan view of a pixel of the active matrix displaydevice shown in FIG. 13;

[0050] FIGS. 15(A), 15(B) and 15(C) are cross-sectional views taken fromline A-A′, B-B′, and C-C′, respectively, in FIG. 14;

[0051]FIG. 16 is a schematic block diagram of an overall layout of anactive matrix display device in accordance with a third modification ofthe fifth embodiment of the present invention;

[0052]FIG. 17 is a plan view of a pixel of the active matrix displaydevice shown in FIG. 16;

[0053] FIGS. 18(A), 18(B) and 18(C) are cross-sectional views taken fromline A-A′, B-B′, and C-C′, respectively, in FIG. 17;

[0054]FIG. 19 is a schematic block diagram of an overall layout of anactive matrix display device in accordance with a sixth embodiment ofthe present invention;

[0055]FIG. 20 is a plan view of a pixel of the active matrix displaydevice shown in FIG. 19;

[0056] FIGS. 21(A), 21(B) and 21(C) are cross-sectional views taken fromline A-A′, B-B′, and C-C′, respectively, in FIG. 20;

[0057]FIG. 22 is a schematic block diagram of an overall layout of aconventional active matrix display device or an active matrix displaydevice in accordance with a comparative embodiment of the presentinvention;

[0058]FIG. 23 is a plan view of a pixel of the active matrix displaydevice shown in FIG. 22;

[0059] FIGS. 24(A), 24(B) and 24(C) are cross-sectional views taken fromline A-A′, B-B′, and C-C′, respectively, in FIG. 23;

[0060] FIGS. 25(A), 25(B) and 25(C) are cross-sectional views of anactive matrix display device in accordance with a comparative embodimentat positions corresponding to line A-A′, B-B′, and C-C′, respectively,in FIG. 23.

BEST MODE FOR CARRYING OUT THE INVENTION

[0061] Embodiments of the present invention will now be described withreference to the drawings. Parts having the same functions as in FIGS.22 and 25 are referred with the same numerals.

[0062] [First Embodiment]

[0063] (Overall Configuration)

[0064]FIG. 1 is a schematic block diagram of an overall layout of anactive matrix display device in accordance with the present invention.FIG. 2 is a plan view of a pixel extracted therefrom. FIGS. 3(A), 3(B)and 3(C) are cross-sectional views taken from line AA′, B-B′, and C-C′,respectively, in FIG. 2.

[0065] In the active matrix display device 1 shown in FIG. 1, thecentral portion of a transparent substrate 10 as a base is used as adisplay section 11. Among a periphery of the transparent substrate 10, adata line driving circuit 3 that outputs image signals is provided onthe ends of data lines sig, whereas a scanning line driving circuit 4that outputs scanning signals is provided on the ends of scanning linesgate.

[0066] In these driving circuits 3 and 4, an n-TFT and a p-TFT form acomplementary TFT, and many complementary TFTs form a shift resistorcircuit, a level shifter circuit, and an analog switch circuit. In thedisplay section 11, like in an active matrix substrate of an activematrix liquid crystal display device, a plurality of scanning linesgate, a plurality of data lines sig extending perpendicular to theextending direction of the scanning lines gate, and a plurality ofpixels 7 formed in a matrix by the data lines sig and the scanning linesgate are provided on the transparent substrate 10.

[0067] Each pixel 7 is provided with a conduction control circuit 50that supplies scanning signals through a scanning line gate, and a thinfilm luminescent device 40 emitting light on the basis of image signalssupplied from a data line sig through the conduction control circuit 50.In this embodiment, the conduction control circuit 50 includes a firstTFT 20 that supplies a scanning signal to a gate electrode through ascanning line gate, s holding capacitor cap for holding an image signalsupplied from a data line sig through the first TFT 20, and a second TFT30 that supplies the image signal held in the holding capacitor cap tothe gate electrode. The second TFT 30 and the thin film luminescentdevice 40 are connected in series between an opposite electrode op and acommon feed line com. The holding capacitor cap may be formed betweenthe opposite electrode op and the scanning line gate, in addition tobetween the opposite electrode op and the common feed line com.

[0068] As shown in FIGS. 2, 3(A), and 3(B), in each pixel of the activematrix display device 1 having such a configuration, the first TFT 20and the second TFT 30 are formed using islands of semiconductive films(silicon films).

[0069] In the first TFT 20, a gate electrode 21 is formed as a part ofthe scanning line gate. In the first TFT 20, one of the source and drainregions is electrically connected to the data line sig via a contacthole in a first insulating film 51, whereas the other is electricallyconnected to a drain electrode 22. The drain electrode 22 extendstowards the region of the second TFT 30, and the extended section iselectrically connected to a gate electrode 31 of the second TFT 30 via acontact hole in the first insulating film 51.

[0070] One of the source and drain regions of the second TFT 30 iselectrically connected to a relay electrode 35, simultaneously formedwith the data line sig, via a contact hole in the first insulating film51, and the relay electrode 35 is electrically connected to atransparent pixel electrode 41, formed of an indium tin oxide (ITO) filmin the thin film luminescent device 40, via a contact hole in a secondinsulating film 52.

[0071] As shown in FIGS. 2, 3(B), and 3(C), pixel electrodes 41 areindependently formed in individual pixels 7. An organic semiconductivefilm 43 formed of polyphenylene vinylene (PVV) or the like and anopposite electrode op formed of a metal film such as lithium-containingaluminum or calcium are deposited above each pixel electrode 41, in thatorder, to form a thin film luminescent device 40. Although an organicsemiconductive film 43 is formed on each pixel in this embodiment, astripe organic semiconductive film 43 will be formed over a plurality ofpixels 7 in some cases, as will be described below. The oppositeelectrode op is formed over the entire display section 11, other thanthe periphery of the region in which terminals 12 are formed. Theterminals 12 include a terminal electrically connected to the oppositeelectrode op formed using a conduction (not shown in the drawing) whichis simultaneously formed with the opposite electrode op.

[0072] The configuration of the thin film luminescent device 40 may be aconfiguration provided with a positive hole injection layer having anincreased luminescent efficiency (hole injection efficiency), or aconfiguration provided with a positive hole injection layer and anelectron injection layer.

[0073] With reference to FIGS. 2 and 3(A) again, the other of the sourceand drain regions of the second TFT 30 is electrically connected to thecommon feed line com via a contact hole of the first insulating film 51.The extension 39 of the common feed line com faces the extension 36 ofthe gate electrode 31 separated by the first insulating film 51 as adielectric film to form a holding capacitor cap. In place of the commonfeed line com, a capacitor line formed parallel to the scanning linegate may be used to form the holding capacitor cap. Alternatively, theholding capacitor cap may be formed of the drain region of the first TFT20 and the gate electrode 31 of the second TFT 30.

[0074] In such an active matrix display device 1, when the first TFT 20turns on by selection of a scanning signal, an image signal from thedata line sig is applied to the gate electrode 31 of the second TFT 30via the first TFT 20 and simultaneously stored in the holding capacitorcap via the first TFT 20. When the second TFT 30 turns on, a voltage isapplied between the opposite electrode op as a negative electrode andthe pixel electrode 41 as a positive electrode. When the voltage exceedsthe threshold voltage, a current (a driving current) flowing in theorganic semiconductive film 43 steeply increases. Thus, the luminescentdevice 40 emits light as an electroluminescent device or an LED device.Light from the luminescent device 40 is reflected by the oppositeelectrode op, passes through the transparent pixel electrode 41, andemerges from the transparent substrate 10. Since the driving currentthat performs such luminescence flows in a current passage including theopposite electrode op, the organic semiconductive film 43, the pixelelectrode 41, the second TFT 30, and the common feed line com, thecurrent stops when the second TFT 30 turns off. The holding capacitorcap, however, holds the gate electrode of the second TFT 30 at apotential corresponding to the image signal; hence, the second TFT 30still turns on. Thus, a driving current continues to flow in theluminescent device 40 so that the pixel maintains a turned-on state.This state is held until the second TFT 30 turns off by accumulation ofthe next image data in the holding capacitor cap. (Bank LayerConfiguration)

[0075] In order to prevent formation of a large parasitic capacitance inthe data line sig in such an active matrix display device 1 in thisembodiment, as shown in FIGS. 1, 2, 3(A), 3(B), and 3(C), an insulatingfilm (a bank layer bank, the region shaded with lines slanting downwardto the left or double slanting lines at a wide pitch) which is thickerthan the organic semiconductive film 43 is provided along the data linesig and the scanning line gate, and the opposite electrode op is formedabove the bank layer bank. Since the second insulating film 52 and thethick bank layer bank are disposed between the data line sig and theopposite electrode op, the parasitic capacitance formed in the data linesig is significantly reduced. Thus, the load on the driving circuits 3and 4 can be reduced, resulting in lower electrical power consumptionand improved display operation.

[0076] The bank layer bank includes a lower insulating layer 61 which isformed of an inorganic material, such as a silicon oxide film or asilicon nitride film, and is thicker than the organic semiconductivefilm 43, and an upper insulating layer 62 which is formed on the lowerinsulating layer 61 and is formed of an organic material, such as aresist or a polyimide film. For example, the thicknesses of the organicsemiconductive film 43, the lower insulating layer 61, and the upperinsulating layer 62 are in ranges of 0.05 μm to 0.2 μm, 0.2 μm to 1.0μm, and 1 μm to 2 μm, respectively.

[0077] In such a double-layer configuration, the upper insulating layer62 is formed of a resist or a polyimide film which facilitates formationof a thick film; hence, only the lower insulating layer 61 can be formedof an inorganic material. Since the entire bank layer bank is not formedof an inorganic material, the formation of the inorganic film by, forexample, a PECVD process does not require a long time. Thus,productivity of the active matrix display device 1 is increased.

[0078] Also, in such a double-layer configuration, the organicsemiconductive film 43 comes into contact with the inorganic lowerinsulating layer 61, but not with the organic upper insulating layer 62.The organic semiconductive film 43 is, therefore, not damaged by theeffects of the organic upper insulating layer 62, and the thin filmluminescent device 40 is not subject to decreased luminescent efficiencynor decreased reliability.

[0079] As shown in FIG. 1, the bank layer bank is also formed in theperipheral region of the transparent substrate 10 (the exterior regionof the display section 11); hence the data line driving circuit 3 andthe scanning line driving circuit 4 are covered with the bank layerbank. The opposite electrode op must be formed at least in the displaysection 11, but is unnecessary in the driving circuit region. Since theopposite electrode op is generally formed by a mask sputtering process,an inaccurate alignment, such as overlap of the opposite electrode opand the driving circuits, may occur. In this embodiment, however, thebank layer bank is disposed between the lead layer of the drivingcircuits and the opposite electrode op; hence formation of parasiticcapacitance in the driving circuits 3 and 4 is prevented even if theopposite electrode op overlaps the driving circuits. As a result, theload on the driving circuits 3 and 4 is reduced, consumption ofelectrical power is reduced, and high-speed display operation isachieved.

[0080] In this embodiment, the bank layer bank is also formed in thearea, which overlaps the relay electrode 35 of the conduction controlcircuit 50, in the region that forms the pixel electrode 41. The organicsemiconductive film 43 is, therefore, not formed in the area overlappingthe relay electrode 35. Since the organic semiconductive film 43 isformed only at the flat section in the region that forms the pixelelectrode 41, the resulting organic semiconductive film 43 has aconstant thickness so that irregularities of display do not occur. Ifthe organic semiconductive film 43 has a part having a lesser thickness,the driving current for the thin film luminescent device 40 isconcentrated therein, resulting in decreased reliability of the thinfilm luminescent device 40. The uniform thickness in this embodimentdoes not cause such a problem.

[0081] If the bank layer bank is not provided in the region overlappingthe relay electrode 35, the organic semiconductive film 43 emits lightby a driving current between the relay electrode 35 and the oppositeelectrode op; however, the relay electrode 35 and the opposite electrodeop inhibit emission of the light to the exterior, and the light does notcontribute to display. The driving current flowing in the section whichdoes not contribute to display is an unavailable current in view of thedisplay.

[0082] In this embodiment, the bank layer bank is formed at the positionin which an unavailable current will flow so as to prevent anunavailable current flowing in the common feed line com. Thus, the widthof the common feed line com can be reduced. As a result, the luminescentarea, which contributes to improved display performance, such asluminance and contrast, can be increased.

[0083] When the bank layer bank is formed of a black resist, the banklayer bank functions as a black matrix which improves the quality ofdisplay, such as contrast. In the active matrix display device 1 of thisembodiment, the opposite electrode op is formed on the entire pixel 7 atthe front face of the transparent substrate 10; hence light reflected bythe opposite electrode op causes decreased contrast. When the bank layerbank that prevents the formation of the parasitic capacitance is formedof a black resist, the bank layer bank also functions as a black matrixwhich shields the light reflected by the opposite electrode op andcontributes to high contrast.

[0084] (Method for Making Active Matrix Display Device)

[0085] Since the resulting bank layer bank surrounds the region thatforms the organic semiconductive film 43, the layer can prevent bleedingof a discharged solution outside when the organic semiconductive film 43is formed by discharging a liquid material (discharging solution)through an ink-jet head in the production process of the active matrixdisplay device. In the following method of making the active matrixdisplay device 1, the steps of making the first TFT 20 and the secondTFT 30 on the transparent substrate 10 are substantially the same as thesteps for making the active matrix substrate of the active matrix liquidcrystal display device; hence only the outline thereof will be brieflydescribed with reference to FIGS. 3(A), 3(B), and 3(C).

[0086] First, an underlying protective film (not shown in the drawing)formed of a silicon oxide film with a thickness of approximately 2,000to 5,000 angstroms is formed, if necessary, on a transparent substrate10 by a plasma enhanced CVD using tetraethoxysilane (TEOS) and gaseousoxygen as material gases. A semiconductive film formed of an amorphoussilicon film with a thickness of approximately 300 to 700 angstroms isformed on the underlying protective film by a plasma enhanced CVD. Theamorphous silicon semiconductive film is subjected to a crystallizationstep, such as a laser annealing step or a solid phase deposition step,so that the semiconductive film is crystallized to form a polysiliconfilm.

[0087] The semiconductive film is patterned to form islands ofsemiconductive films, and then a gate insulating film 37 formed of asilicon oxide or silicon nitride film with a thickness of approximately600 to 1,500 angstroms is formed thereon by a plasma enhanced CVD usingtetraethoxysilane (TEOS), gaseous oxygen and the like as material gases.

[0088] Next, a conductive film formed of a metal film, such as aluminum,tantalum, molybdenum, titanium, or tungsten, is formed by a sputteringprocess, and is patterned to form gate electrodes 21 and 31 and anextension 36 of the gate electrode 31 (a gate electrode forming step).This step also forms a scanning line gate.

[0089] In such a state, a high concentration of phosphorus ions areimplanted to source and drain regions by self-alignment with respect tothe gate electrodes 21 and 31. The section which is not doped with theimpurity functions as a channel region.

[0090] After forming a first insulating interlayer 51 and then formingcontact holes, a data line sig, a drain electrode 22, a common feed linecom, an extension 39 of the common feed line com, and a relay electrode35 are formed. As a result, a first TFT 20, a second TFT 30, and aholding capacitor cap are formed.

[0091] Next, a second insulating interlayer 52 is formed and a contacthole is formed at the position corresponding to the relay electrode 35of the insulating interlayer. An ITO film is formed on the entire secondinsulating interlayer 52 and is patterned, and then a pixel electrode41, which is electrically connected to the source and drain regions ofthe second TFT 30 via the contact hole, is formed in each pixel 7.

[0092] An inorganic film (that forms a lower insulating layer 61) isformed on the front face of the second insulating film 52 by a PECVDprocess, and then a resist (upper insulating layer 62) is formed alongthe scanning line gate and the data line sig. The inorganic film ispatterned through the resist as a mask to form a lower insulating layer61. Since the lower insulating layer 61 is thin, overetching does notoccur when the lower insulating layer 61 is formed by such a patterningprocess. Thus, the pixel electrode 41 is not damaged.

[0093] After such an etching step, the inorganic film forms the lowerinsulating layer 61 along the scanning line gate and the data line sig.As a result, a double-layered bank layer bank including the lowerinsulating layer 61 and the upper insulating layer 62 is formed. In thisstep, the resist section remaining along the data line sig has a largewidth so as to cover the common feed line com. Thus, a region that formsthe organic semiconductive film 43 in the luminescent device 40 issurrounded with the bank layer bank.

[0094] Organic semiconductive films 43 corresponding to R, G, and B areformed in regions in a matrix bounded by the bank layer bank by anink-jet process. A liquid material (a precursor or a dischargingsolution) that forms the organic semiconductive film 43 is discharged inthe inner region of the bank layer bank through an ink-jet head andfixed in the inner region of the bank layer bank to form the organicsemiconductive film 43. Since the upper insulating layer 62 of the banklayer bank is formed of a resist or a polyimide film, it haswater-repellent properties. In contrast, the precursor of the organicsemiconductive film 43 contains a hydrophilic solution; hence, theregion that forms the organic semiconductive film 43 is reliably definedby the bank layer bank. Since the solution does not bleed out of theadjacent pixels 7, the organic semiconductive film 43 can be formed onlyin the predetermined region.

[0095] In this step, since the precursor discharged from the ink-jethead forms a convex surface with a thickness of approximately 2 μm to 4μm by the surface tension, the bank layer must have a thickness ofapproximately 1 μm to 3 μm. Although the precursor discharged from theink-jet head comes into contact with the upper insulating layer 62 inthis state, the solvent in the precursor is removed by heat treatment at100° C. to 150° C. Thus, the thickness of the organic semiconductivefilm 43 fixed in the inner region of the bank layer bank is in a rangeof approximately 0.05 μm to 0.2 μm. The organic semiconductive film 43no longer is in contact with the upper insulating layer 62.

[0096] When the bank layer bank has a height of 1 μm or more, the banklayer bank sufficiently functions as a barrier even if the bank layerbank does not have water-repellent properties. Such a thick bank layerbank can define the region that forms the organic semiconductive film 43when the film is formed by a coating process in place of the ink-jetprocess.

[0097] Next, an opposite electrode op is formed on substantially theentire transparent substrate 10.

[0098] According to the method, organic semiconductive films 43 can beformed at predetermined positions corresponding to R, G, and B by anink-jet process; hence a full color active matrix display device 1 canbe made with high productivity.

[0099] Although TFTs are also formed in the data line driving circuit 3and the scanning line driving circuit 4 shown in FIG. 1, these TFTs canbe formed by completely or partly employing the above steps of formingthe TFT in the pixel 7. Thus, the TFTs in the driving circuits are alsoformed in the same interlayer in which TFTs for pixels 7 are formed. Incombinations for the first TFT 20 and the second TFT 30, combinations ofan n-type and an n-type, of a p-type and a p-type, and of an n-type anda p-type are allowable. Since all the combinations of TFTs can beproduced by any well-known method, description thereof will be omitted.

[0100] [Second Embodiment]

[0101] FIGS. 4(A), 4(B) and 4(C) are cross-sectional views of an activematrix display device in accordance with this embodiment at positionscorresponding to line A-A′, B-B′, and C-C′, respectively, in FIG. 2.This embodiment has a basic configuration which is substantially thesame as that of the first embodiment; hence, the same symbols areassigned for the same parts, without detailed description thereof. Sincethe region that forms the bank layer bank in the active matrix displaydevice of this embodiment is the same as that in the first embodiment,FIGS. 1 and 2 are also referred to in the following description.

[0102] In order to prevent formation of a large parasitic capacitance ina data line sig, also, in this embodiment, as shown in FIGS. 1, 2, 4(A),4(B), and 4(C), an insulating film (a bank layer bank, the region shadedwith lines slanting downward to the left or double slanting lines at awide pitch) which is thicker than an organic semiconductive film 43 isprovided along the data line sig and a scanning line gate, and anopposite electrode op is formed above the bank layer bank.

[0103] As in the first embodiment, the bank layer bank includes aninorganic lower insulating layer 61, such as a silicon oxide or siliconnitride film which is thicker than the organic semiconductive film 43,and an upper organic insulating film 62, such as a resist or a polyimidefilm, formed on the lower insulating layer 61.

[0104] In this embodiment, as shown in FIGS. 4(A), 4(B) and 4(C), theupper organic insulating film 62 has a smaller width than that of thelower inorganic insulating film 61 and is formed on the inner region ofthe lower insulating layer 61. For example, the overlapping width of theupper insulating layer 62 and the pixel electrode 41 is in a range of 1μm to 3 μm, and a gap between an edge of the lower insulating layer 61and the corresponding edge of the upper insulating layer 62 is in arange of 1 μm to 5 μm. Thus, the bank layer bank has a double-layeredconfiguration in which the underlying insulating film 61 and the upperinsulating layer 62 having different widths are deposited.

[0105] The upper insulating layer 62 is formed of a resist or apolyimide film, which facilitates formation of a thick film, in such adouble-layered configuration, and only the lower insulating layer 61 isformed of an inorganic material. The process, such as a PECVD process,that forms the inorganic film does not require a long deposition time,unlike the process that forms a thick bank layer bank which is entirelyformed of an inorganic material. Thus, the active matrix display device1 can be manufactured with high productivity.

[0106] In such a double-layered configuration, the organicsemiconductive film 43 comes into contact with the lower insulatinglayer 61, but not with the upper insulating layer 62. Furthermore, theupper insulating layer 62 is formed on the inner portion of the lowerinsulating layer 61 to avoid the contact of the organic semiconductivefilm 43 with the upper insulating layer 62. Thus, the upper organicinsulating film 62 does not cause deterioration of the organicsemiconductive film 43 which would result in decreased luminescentefficiency and decreased reliability of the thin film luminescent device40.

[0107] The other configurations are the same as those in the firstembodiment. Each pixel 7 is surrounded with the bank layer bank. Organicsemiconductive films 43 can be formed in predetermined positionscorresponding to R, G, and B by an ink-jet process; hence, a full coloractive matrix display device 1 can be manufactured with highproductivity, as in the first embodiment.

[0108] In the formation of the bank layer bank having such aconfiguration, an inorganic film (that forms a lower insulating layer61) is formed on the front face of the second insulating film 52 by aPECVD process, the lower insulating layer 61 is formed along thescanning line gate and the data line sig, and then a resist used for thepatterning is removed. Next, a resist or a polyimide film with athickness which is smaller than that of the lower insulating layer 61 isformed thereon as the upper insulating layer 62. Since the lowerinsulating layer 61 is thin, overetching does not occur when the lowerinsulating layer 61 is formed by patterning. Thus, the pixel electrode41 is not damaged.

[0109] [Third Embodiment]

[0110] An active matrix display device 1 in this embodiment has the sameconfiguration as that in the second embodiment, but a material for thebank layer bank is different. Thus, the same symbols are assigned forthe same parts, without detailed description thereof. FIGS. 1, 2, 4(A),4(B) and 4(C) are also referred to in the following description, as inthe second embodiment.

[0111] In order to prevent formation of a large parasitic capacitance ina data line sig, as shown in FIGS. 1, 2, 4(A), 4(B), and 4(C), aninsulating film (a bank layer bank, the region shaded with linesslanting downward to the left or double slanting lines at a wide pitch)which is thicker than an organic semiconductive film 43 is providedalong the data line sig and a scanning line gate, and an oppositeelectrode op is formed above the bank layer bank.

[0112] The bank layer bank includes an inorganic lower insulating layer61, such as a silicon nitride film, which is thicker than the organicsemiconductive film 43, and an upper inorganic insulating film 62, suchas a silicon oxide film, formed on the lower insulating layer 61. Sincethe organic semiconductive film 43 does not come into contact with anyother organic material in such a double-layered configuration, it willnot be deteriorated by the effects of the other organic material. Thus,a decrease in luminescent efficiency and reliability does not occur inthe thin film luminescent device 40.

[0113] The upper organic insulating film 62 has a smaller width thanthat of the lower inorganic insulating film 61 and is formed on theinner region of the lower insulating layer 61. Thus, the bank layer bankhas a double-layered configuration in which the underlying insulatingfilm 61 and the upper insulating layer 62 having different widths aredeposited.

[0114] In the formation of the bank layer bank having such aconfiguration, inorganic films (a silicon nitride film and a siliconoxide film) that form the lower insulating layer 61 and the upperinsulating layer 62 are formed in that order, and the upper insulatinglayer 62 is patterned. Since the lower insulating layer 61 functions asan etching stopper, slight overetching will not damage the pixelelectrode 41. After the patterning, the lower insulating layer 61 ispatterned. Since a single layer of the lower insulating layer 61 isetched, the etching is readily controlled and overetching which woulddamage the pixel electrode 41 does not occur.

[0115] The other configurations are the same as those in the first andsecond embodiments. Each pixel 7 is, therefore, surrounded with the banklayer bank. Organic semiconductive films 43 can be formed inpredetermined positions corresponding to R, G, and B by an ink-jetprocess; hence, a full color active matrix display device 1 can bemanufactured with high productivity, as in the first embodiment.

[0116] [Modifications of First, Second, and Third Embodiments]

[0117] Since the bank layer bank is formed along the data line sig andthe scanning line gate in the above embodiments, the bank layer bankbounds pixels 7 in a matrix. The bank layer bank may be formed alongonly the data line sig. Organic semiconductive film 43 having a stripedpattern, corresponding to R, G, and B, can be formed in striped regionsbounded by the bank layer bank by an inkjet process; hence a full coloractive matrix display device 1 can be made with high productivity.

[0118] Although the corners bounded by the bank layer bank are edged inthe above embodiments, it may be rounded so that the organicsemiconductive film 43 has a rounded planar shape. The organicsemiconductive film 43 having such a shape avoids the concentration ofthe driving current at the corners, hence defects, such as insufficientvoltage resistance, can be prevented at the corners.

[0119] [Fourth Embodiment]

[0120] An active matrix display device 1 in this embodiment has a basicconfiguration like that in the first, second or third embodiment; hence,FIG. 1 is referred to for the description, and the same symbols areassigned for the same parts, without detailed description thereof.

[0121]FIG. 5 is a plan view of a pixel taken from an active matrixdisplay device of this embodiment. FIGS. 6(A), 6(B) and 6(C) arecross-sectional views taken from line A-A′, B-B′, and C-C′,respectively, in FIG. 5.

[0122] As described below, a lower insulating layer 61 partly overlapsan upper insulating layer 62 in this embodiment so that these films havedifferent functions. As shown in FIG. 1, also, in this embodiment, aplurality of scanning lines gate, a plurality of data lines sigextending perpendicular to the extending direction of the scanning linesgate, a plurality of common feed lines com formed parallel to the datalines sig, and a plurality of pixels 7 formed in a matrix by the datalines sig and the scanning lines gate are provided.

[0123] In this embodiment, as shown in FIGS. 5 and 6, a lower insulatinglayer 61 (a region shaded by double lines slanting down toward the left)is formed so as to cover an area overlapping the portion that forms aconduction control circuit 50 in the region that forms a pixel electrode41; the data line sig; the common feed line com; and the scanning linegate. On the other hand, the upper insulating layer 62 (a region shadedby lines at a wide pitch and slanting down toward the left) is formedonly on areas along the data lines sig in the region that forms thelower insulating layer 61 so as to form a striped pattern. Organicsemiconductive films 43 are formed in the striped areas bounded by theupper insulating layer 62.

[0124] When the organic semiconductive films 43 having the stripedpattern are formed by an ink-jet process in such a configuration, theoverlapping section of the lower insulating layer 61 and the upperinsulating layer 62 is used as a bank layer bank to prevent bleeding ofthe discharged solution. In this embodiment, the overlapping section ofthe lower insulating layer 61 and the upper insulating layer 62 has athickness of 1 μm or more.

[0125] Since the second insulating film 52 and the thick bank layer bank(the lower insulating layer 61 and the upper insulating layer 62) aredisposed between the data lines sig and the opposite electrode op insuch a configuration, parasitic capacitance forming in the data line sigis significantly reduced. Thus, the load on the driving circuits 3 and 4can be reduced, resulting in lower electrical power consumption andimproved display operation.

[0126] Although the striped organic semiconductive films 43 are formed,an area overlapping the portion that forms a conduction control circuit50 in the region that forms the pixel electrode 41, and a scanning linegate are covered with the upper insulating layer 62. Thus, organicsemiconductive film 43 formed only on the flat section in the pixelelectrode 41 contributes to luminescence. In other words, the thin filmluminescent device 40 is formed only in the flat section of the pixelelectrode 41. Thus, the organic semiconductive film 43 has a constantthickness and does not cause irregularities of display and concentrationof a driving current. Since the lower insulating layer 61 inhibits acurrent flow in the section which does not contribute to display, anunavailable current does not flow in the common feed line com.

[0127] When the underlying insulating film 61 is formed of an inorganicmaterial such as a silicon oxide film or a silicon nitride film which isthicker than the organic semiconductive film 43, and when the upperinsulating layer 62 is formed of an organic material, such as a resistor a polyimide film, only the lower insulating layer 61 is formed of theinorganic material. Thus, the process, such as a PECVD process, thatforms the inorganic film does not require a long deposition time, unlikethe process that forms a thick bank layer bank which is entirely formedof an inorganic material. Thus, the active matrix display device 1 canbe manufactured with high productivity. In such a double-layeredconfiguration, the organic semiconductive film 43 comes into contactwith the lower insulating layer 61, but not with the upper organicinsulating film 62. Thus, the upper organic insulating film 62 does notcause deterioration of the organic semiconductive film 43 which resultsin decreased luminescent efficiency and decreased reliability of thethin film luminescent device 40.

[0128] When the lower insulating layer 61 is formed of an inorganicmaterial, such as a silicon nitride film, which is thicker than theorganic semiconductive film 43, and when the upper insulating layer 62formed on the lower insulating layer 61 is formed of an inorganicmaterial, such as a silicon oxide film, the organic semiconductive film43 does not come into contact with an organic material, and thus is notdeteriorated by the effects of the organic material. Thus, a decrease inthe luminescent efficiency and reliability does not occur in the thinfilm luminescent device 40. Since the underlying insulating film 61 witha smaller width is deposited on the inner region of the lower insulatinglayer 61, the lower insulating layer 61 functions as an etching stopperwhen the upper insulating layer 62 is patterned, as described in thethird embodiment.

[0129] [Fifth Embodiment]

[0130]FIG. 7 is a schematic block diagram of an overall layout of anactive matrix display device. FIG. 8 is a plan view of a pixel extractedtherefrom. FIGS. 9(A), 9(B) and 9(C) are cross-sectional views takenfrom line A-A′, B-B′, and C-C′, respectively, in FIG. 8. This embodimenthas a basic configuration which is substantially the same as that of thefirst embodiment; hence, the same symbols are assigned for the sameparts, without detailed description thereof.

[0131] Also, in this embodiment, an insulating film (a bank layer bank,the region shaded with lines slanting downward to the left or doubleslanting lines at a wide pitch) which is thicker than an organicsemiconductive film 43, is provided along the data line sig and ascanning line gate, and an opposite electrode op is formed above thebank layer bank. Since the second insulating film 52 and the thick banklayer bank are disposed between the data lines sig and the oppositeelectrode op, parasitic capacitance forming in the data line sig issignificantly reduced. Thus, the load on the driving circuits 3 and 4can be reduced, resulting in lower electrical power consumption andimproved display operation.

[0132] The bank layer bank includes a lower insulating layer 61 which isformed of an inorganic material, such as a silicon oxide film or asilicon nitride film, and is thicker than the organic semiconductivefilm 43, and an upper insulating layer 62 which is formed on the lowerinsulating layer 61, and is formed of an organic material, such as aresist or a polyimide film. For example, the thicknesses of the organicsemiconductive film 43, the lower insulating layer 61, and the upperinsulating layer 62 are in ranges of 0.05 μm to 0.2 μm, 0.2 μm to 1.0μm, and 1 μm to 2 μm, respectively. Thus, the organic semiconductivefilm 43 comes into contact with the inorganic lower insulating layer 61,but not with the organic upper insulating layer 62. The organicsemiconductive film 43 is, therefore, not damaged by the effects of theorganic upper insulating layer 62, and the thin film luminescent device40, as in the first embodiment, is not subject to decreased luminescentefficiency nor decreased reliability.

[0133] In the active matrix display device 1 having such aconfiguration, the organic semiconductive film 43 is surrounded with thebank layer bank. Thus, the opposite electrode op of each pixel 7 will beconnected to the opposite electrode op of the adjacent pixel 7 over thebank layer bank as it stands. In this embodiment, discontinuitiesportion off (first discontinuities portion) are provided for both thelower insulating layer 61 and the upper insulating layer 62 of the banklayer bank along the data lines sig between adjacent pixels 7.Discontinuities portion off (first discontinuities portion) are alsoprovided for both the lower insulating layer 61 and the upper insulatinglayer 62 of the bank layer bank along the scanning lines gate betweenadjacent pixels 7. Furthermore, discontinuities portion off (firstdiscontinuities portion) are provided for both the lower insulatinglayer 61 and the upper insulating layer 62 of the bank layer bank at theends of each data line sig and each scanning line gate.

[0134] Since the thick bank layer bank is not provided at eachdiscontinuity off the discontinuity off does not have a large step andis flat. Thus, the opposite electrode op formed at this section does notcause disconnection. The opposite electrodes op of adjacent pixels 7 aresecurely connected through the flat section not having a step of thebank layer bank. Accordingly, a thick insulating film (a bank layerbank) can be formed around a pixel 7 to suppress the parasiticcapacitance, without disconnection of the opposite electrodes op formedon the thick insulating film (bank layer bank).

[0135] In the peripheral region of the transparent substrate 10 (theouter region of the display section 11), the data line driving circuit 3and the scanning line driving circuit 4 are covered with the bank layerbank (the region is indicated by shading). Thus, the opposite electrodeop provided above the region that forms these driving circuits isseparated by the bank layer bank from the lead layer of these drivingcircuits. Since formation of the parasitic capacitance in the drivingcircuits can be prevented, the load on the driving circuits 3 and 4 canbe reduced, resulting in lower electrical power consumption and improveddisplay operation.

[0136] Furthermore, a discontinuity off (second discontinuity) isprovided for both the lower insulating layer 61 and the upper insulatinglayer 62 of the bank layer bank between the region that forms thescanning line driving circuit 4 and the region for the data line drivingcircuit 3. The opposite electrode op at the side of the display section11 and the opposite electrode op at the peripheral side of the substrateare connected through the discontinuity off of the bank layer bank, andthe discontinuity off is also a flat section not having a step. Sincethe opposite electrode op formed at the discontinuity off does not causedisconnection, the opposite electrodes op of the display section 11 andthe opposite electrode op of the peripheral section of the substrate,are securely connected through the discontinuity off of the bank layerbank. Thus, terminals 12 connected to the opposite electrode op of theperipheral section of the substrate are securely connected to theopposite electrode op of the display section 11.

[0137] Since the bank layer bank is also formed in an area in which theregion that forms the pixel electrode 41 overlaps the relay electrode 35of the conduction control circuit 50 in this embodiment, no unavailablecurrent flows. Accordingly, the width of the common feed line com can bereduced.

[0138] In the production of the active matrix display device 1 havingsuch a configuration, the bank layer bank is formed on the front face ofthe second insulating film 52 along the scanning lines gate and the datalines sig, as in the first embodiment. Discontinuities portion off areformed at predetermined positions of the bank layer bank. The bank layerbank formed along the data lines sig has a larger width so that it cancover the common feed line com. As a result, the region that forms theorganic semiconductive film 43 in the thin film luminescent device 40 issurrounded with the bank layer bank.

[0139] Organic semiconductive films 43 corresponding to R, G, and B areformed in a region bounded as a matrix by the bank layer bank by anink-jet process. A liquid material (a precursor) that forms the organicsemiconductive film 43 is discharged into the inner region of the banklayer bank through an ink-jet head and is fixed in the inner region ofthe bank layer bank to form the organic semiconductive film 43. Sincethe upper insulating layer 62 of the bank layer bank includes a resistor a polyimide film, it has water-repellent properties. In contrast, theprecursor of the organic semiconductive film 43 contains a hydrophilicsolution; hence, the region that forms the organic semiconductive film43 is reliably defined by the bank layer bank, and the solution does notbleed out of the adjacent pixels 7. Since the discontinuities portionoff provided in the bank layer bank which bounds the region that formsthe organic semiconductive film 43 are narrow, the region that forms theorganic semiconductive film 43 can be reliably defined by the bank layerbank, and the solution does not bleed out of the adjacent pixels 7.Accordingly, the organic semiconductive film 43 can be formed within apredetermined region.

[0140] Since the precursor discharged from the ink-jet head forms aconvex surface with a thickness of approximately 2 μm to 4 μm by thesurface tension, the bank layer must have a thickness of approximately 1μm to 3 μm. Although the precursor discharged from the ink-jet headcomes into contact with the upper insulating layer 62 in this state, thesolvent in the precursor is removed by heat treatment at 100° C. to 150°C. Thus, the thickness of the organic semiconductive film 43 fixed inthe inner region of the bank layer bank is in a range of approximately0.05 μm to 0.2 μm. The organic semiconductive film 43 no longer is incontact with the upper insulating layer 62.

[0141] When the bank layer bank has a height of 1 μm or more, the banklayer bank sufficiently functions as a barrier even if the bank layerbank does not have water-repellent properties. Such a thick bank layerbank can define the region that forms the organic semiconductive film 43when the film is formed by a coating process in place of the ink-jetprocess.

[0142] [First Modification of Fifth Embodiment]

[0143]FIG. 10 is a schematic block diagram of an overall layout of anactive matrix display device. FIG. 11 is a plan view of a pixel takenfrom the device. FIGS. 12(A), 12(B) and 12(C) are cross-sectional viewstaken from line A-A′, B-B′, and C-C′, respectively, in FIG. 11. Thisembodiment has a basic configuration which is substantially the same asthat of the first embodiment; hence, the same symbols are assigned forthe same parts, without detailed description thereof.

[0144] Also, as shown in FIGS. 10, 11, 12(A), 12(B), and 12(C), in theactive matrix display device 1 of this embodiment, an insulating film (abank layer bank, the region shaded with lines slanting downward to theleft or double slanting lines at a wide pitch) which is thicker than anorganic semiconductive film 43, is provided along the data line sig anda scanning line gate, and an opposite electrode op is formed above thebank layer bank. Since the second insulating film 52 and the thick banklayer bank are disposed between the data lines sig and the oppositeelectrode op, parasitic capacitance forming in the data line sig issignificantly reduced. Thus, the load on the driving circuits 3 and 4can be reduced, resulting in lower electrical power consumption andimproved display operation.

[0145] The bank layer bank includes a lower insulating layer 61 which isformed of an inorganic material, such as a silicon oxide film or asilicon nitride film, and is thicker than the organic semiconductivefilm 43, and an upper insulating layer 62 which is formed on the lowerinsulating layer 61 and is formed of an organic material, such as aresist or a polyimide film. Thus, the organic semiconductive film 43comes into contact with the inorganic lower insulating layer 61, but notwith the organic upper insulating layer 62. The organic semiconductivefilm 43 is, therefore, not damaged by the effects of the organic upperinsulating layer 62, and the thin film luminescent device 40, as in thefirst embodiment, is not subject to decreased luminescent efficiency nordecreased reliability.

[0146] In this embodiment, the bank layer bank is formed along the dataline sig and the scanning line gate, and each pixel 7 is surrounded withthe bank layer bank. Organic semiconductive films 43 can be formed inpredetermined positions corresponding to R, G, and B by an ink-jetprocess; hence, a full color active matrix display device 1 can bemanufactured with high productivity.

[0147] Furthermore, discontinuities portion off (first discontinuitiesportion) are provided for the bank layer bank along the scanning linegate between adjacent pixels 7. Discontinuities portion off (firstdiscontinuities portion) are also provided for the bank layer bank atthe ends of each data line sig and each scanning line gate. Furthermore,a discontinuity off (second discontinuity) is provided for the banklayer bank between the region that forms the scanning line drivingcircuit 4 and the region for the data line driving circuit 3. Thus, theopposite electrodes op are securely connected through the flat sections(discontinuities portion off) of the bank layer bank not having steps,and do not cause disconnection.

[0148] [Second Modification of Fifth Embodiment]

[0149]FIG. 13 is a schematic block diagram of an overall layout of anactive matrix display device. FIG. 14 is a plan view of a pixel takenfrom the device. FIGS. 15(A), 15(B) and 15(C) are cross-sectional viewstaken from line A-A′, B-B′, and C-C′, respectively, in FIG. 14. Thisembodiment has a basic configuration which is substantially the same asthat of the first embodiment; hence, the same symbols are assigned forthe same parts, without detailed description thereof.

[0150] Also, as shown in FIGS. 13, 14, 15(A), 15(B), and 15(C), in theactive matrix display device 1 of this embodiment, an insulating film (abank layer bank, the region shaded with lines slanting downward to theleft or double slanting lines at a wide pitch) which is thicker than anorganic semiconductive film 43 is provided along the data line sig and ascanning line gate, and an opposite electrode op is formed above thebank layer bank. Since the second insulating film 52 and the thick banklayer bank are disposed between the data lines sig and the oppositeelectrode op, parasitic capacitance forming in the data line sig issignificantly reduced. Thus, the load on the driving circuits 3 and 4can be reduced, resulting in lower electrical power consumption andimproved display operation.

[0151] The bank layer bank includes a lower insulating layer 61 which isformed of an inorganic material, such as a silicon oxide film or asilicon nitride film, and is thicker than the organic semiconductivefilm 43, and an upper insulating layer 62 which is formed on the lowerinsulating layer 61 and is formed of an organic material, such as aresist or a polyimide film. Thus, the organic semiconductive film 43comes into contact with the inorganic lower insulating layer 61, but notwith the organic upper insulating layer 62. The organic semiconductivefilm 43 is, therefore, not damaged by the effects of the organic upperinsulating layer 62, and the thin film luminescent device 40, as in thefirst embodiment, is not subject to decreased luminescent efficiency nordecreased reliability.

[0152] In this embodiment, the bank layer bank is formed along the dataline sig and the scanning line gate, and each pixel 7 is surrounded withthe bank layer bank. Organic semiconductive films 43 can be formed inpredetermined positions corresponding to R, G, and B by an ink-jetprocess; hence, a full color active matrix display device 1 can bemanufactured with high productivity.

[0153] Furthermore, discontinuities portion off (first discontinuitiesportion) are provided for the bank layer bank along the data line sigbetween adjacent pixels 7. Discontinuities portion off (firstdiscontinuities portion) are also provided for the bank layer bank atthe ends of each data line sig and each scanning line gate. Furthermore,a discontinuity off (second discontinuity) is provided for the banklayer bank between the region that forms the scanning line drivingcircuit 4 and the region for the data line driving circuit 3. Thus theopposite electrodes op are securely connected through the flat sections(discontinuities portion off of the bank layer bank not having steps,and do not cause disconnection.

[0154] [Third Modification of Fifth Embodiment]

[0155]FIG. 16 is a schematic block diagram of an overall layout of anactive matrix display device. FIG. 17 is a plan view of a pixel takenfrom the device. FIGS. 18(A), 18(B), and 18(C) are cross-sectional viewstaken from line A-A′, B-B′, and C-C′, respectively, in FIG. 17. Thisembodiment has a basic configuration which is substantially the same asthat of the first and fifth embodiments; hence, the same symbols areassigned for the same parts, without detailed description thereof.

[0156] Also, as shown in FIGS. 16, 17, 18(A), 18(B), and 18(C), in theactive matrix display device 1 of this embodiment, an insulating film (abank layer bank, the region shaded with lines slanting downward to theleft or double slanting lines at a wide pitch) which is thicker than anorganic semiconductive film 43, is provided along the data line sig anda scanning line gate, and an opposite electrode op is formed above thebank layer bank. Since the second insulating film 52 and the thick banklayer bank are disposed between the data lines sig and the oppositeelectrode op, parasitic capacitance forming in the data line sig issignificantly reduced. Thus, the load on the driving circuits 3 and 4can be reduced, resulting in lower electrical power consumption andimproved display operation.

[0157] The bank layer bank includes a lower insulating layer 61 which isformed of an inorganic material, such as a silicon oxide film or asilicon nitride film, and is thicker than the organic semiconductivefilm 43, and an upper insulating layer 62, which is formed on the lowerinsulating layer 61, and is formed of an organic material, such as aresist or a polyimide film.

[0158] In this embodiment, the bank layer bank is formed along the dataline sig and the scanning line gate, and each pixel 7 is surrounded withthe bank layer bank. Organic semiconductive films 43 can be formed inpredetermined positions corresponding to R, G, and B by an ink-jetprocess; hence, a full color active matrix display device 1 can bemanufactured with high productivity.

[0159] Furthermore, discontinuities portion off (first discontinuitiesportion) are provided for the bank layer bank along the data line sigbetween adjacent pixels 7. Discontinuities portion off (firstdiscontinuities portion) are also provided for the bank layer bank atthe ends of each data line sig and each scanning line gate. Furthermore,a discontinuity off (second discontinuity) is provided for the banklayer bank between the region that forms the scanning line drivingcircuit 4 and the region for the data line driving circuit 3.

[0160] In this embodiment, however, these discontinuities portion offare provided for only the upper insulating layer 62 among the lowerinsulating layer 61 (a region shaded by double slashes) and the upperinsulating layer 62 (a region shaded by lines slanting down to the left)of the bank layer bank, and thus the lower insulating layer 61 is formedat the discontinuities portion off

[0161] In such a configuration, only the thin lower insulating layer 61is provided at the discontinuities portion off hence, the oppositeelectrode op can be securely connected to each other through thediscontinuities portion offwithout disconnection.

[0162] Although the lower insulating layer 61 is formed for the firstand second discontinuities portion in this embodiment, the presentinvention is not limited to this embodiment. The lower insulating layer61 may be formed for either the first discontinuities portion or thesecond discontinuity. The configuration of this embodiment in which thelower insulating layer 61 is formed at the discontinuities portion canbe applied to the bank layer bank having a pattern described in anyother embodiment.

[0163] [Sixth Embodiment]

[0164]FIG. 19 is a schematic block diagram of an overall layout of anactive matrix display device. FIG. 20 is a plan view of a pixel takenfrom the device. FIGS. 21(A), 21(B) and 21(C) are cross-sectional viewstaken from line A-A′, B-B′, and C-C′, respectively, in FIG. 20. Thisembodiment has a basic configuration which is substantially the same asthat of the first and fifth embodiments; hence, the same symbols areassigned for the same parts, without detailed description thereof.

[0165] Also, as shown in FIGS. 19, 20, 21(A), 21(B), and 21(C), in theactive matrix display device 1 of this embodiment, an insulating film (abank layer bank, the region shaded with lines slanting downward to theleft or double slanting lines at a wide pitch) which is thicker than anorganic semiconductive film 43, is provided along the data line sig anda scanning line gate, and an opposite electrode op is formed above thebank layer bank. Since the second insulating film 52 and the thick banklayer bank are disposed between the data lines sig and the oppositeelectrode op, parasitic capacitance forming in the data line sig issignificantly reduced. Thus, the load on the driving circuits 3 and 4can be reduced, resulting in lower electrical power consumption andimproved display operation.

[0166] The bank layer bank includes a lower insulating layer 61, whichis formed of an inorganic material, such as a silicon oxide film or asilicon nitride film, and is thicker than the organic semiconductivefilm 43, and an upper insulating layer 62, which is formed on the lowerinsulating layer 61 and is formed of an organic material, such as aresist or a polyimide film. Thus, the organic semiconductive film 43comes into contact with the inorganic lower insulating layer 61, but notwith the organic upper insulating layer 62. The organic semiconductivefilm 43 is, therefore, not damaged by the effects of the organic upperinsulating layer 62, and the thin film luminescent device 40 is notsubject to decreased luminescent efficiency nor decreased reliability.

[0167] Since the bank layer bank is formed along the data line sig inthis embodiment, organic semiconductive film 43 having a stripedpattern, corresponding to R, G, and B, can be formed in striped regionsbounded by the bank layer bank by an ink-jet process; hence a full coloractive matrix display device 1 can be made with high productivity.

[0168] In addition, discontinuities portion off (first discontinuitiesportion) are provided for both the lower insulating layer 61 and theupper insulating layer 62 of the bank layer bank along the data linessig at the ends of each data line sig. Thus, the opposite electrode opof each pixel 7 is connected to the opposite electrode op of theadjacent pixel 7 over the thick bank layer bank in the direction of thescanning line gate. In the direction of the data line sig, however, theopposite electrode op of each pixel 7 is connected to the oppositeelectrode op of the adjacent pixel 7 at the discontinuity off (the flatsection not having a step due to the bank layer bank) at the ends of thedata line sig. Since the opposite electrode op of each pixel 7 isconnected to the opposite electrode op of the adjacent pixel 7 at theflat section not having a step due to the bank layer bank, the oppositeelectrode op of each pixel 7 does not cause disconnection.

[0169] In the peripheral region of the transparent substrate 10 (theouter region of the display section 11), the data line driving circuit 3and the scanning line driving circuit 4 are covered with the bank layerbank. Thus, the opposite electrode op provided above the region thatforms these driving circuits is separated by the bank layer bank fromthe lead layer of these driving circuits. Since formation of theparasitic capacitance in the driving circuits can be prevented, the loadon the driving circuits 3 and 4 can be reduced, resulting in lowerelectrical power consumption and improved display operation.

[0170] Furthermore, the bank layer bank, which is formed above thescanning line driving circuit 4 and the data line driving circuit 3, hasa discontinuity off (second discontinuity) between the region that formsthe scanning line driving circuit 4 and the region for the data linedriving circuit 3. The opposite electrodes are securely connectedthrough the flat section not having a step due to the bank layer bank(the discontinuity off without disconnection.

[0171] [Other Embodiments]

[0172] As described in the third modification of the fifth embodiment,the configuration in which only the upper insulating layer 62 hasdiscontinuities portion off of the bank layer bank may also be appliedto the sixth embodiment.

[0173] As described in the fifth and sixth embodiments, the concept ofprovision of discontinuities portion off in the bank layer bank thatavoids disconnection of the opposite electrodes op, is also applicableto a bank layer bank formed of an inorganic material, as described inthe third embodiment. Industrial Applicability

[0174] As described above, in the active matrix display device inaccordance with the present invention, the insulating film, which isformed so as to surround the region that forms the organicsemiconductive film includes a lower insulating layer, which is formedof an inorganic material, and is thicker than the organic semiconductivefilm, and an upper insulating layer which is formed thereon and isformed of an organic material. Since a thick insulating film is disposedbetween the data line and the opposite electrode, formation of parasiticcapacitance in the data line can be prevented. Thus, the load on thedata line driving circuit can be reduced, resulting in lower electricalpower consumption and improved display operation. In the presentinvention, only the lower insulating layer in contact with the organicsemi conductive film of the thin film luminescent device is formed of aninorganic material, and the upper insulating layer formed thereon isformed of an organic material, which facilitates formation of a thickfilm. Thus, the process has high productivity. The upper insulatinglayer does not come into contact with the organic semiconductive film,but the lower insulating layer formed of an inorganic material does comeinto contact with the organic semiconductive film; hence, the organicsemiconductive film is protected from deterioration caused by the upperinsulating layer. Accordingly, the thin film luminescent device does notcause decreased luminescent efficiency or reliability.

[0175] When the upper insulating layer is deposited in an inner regionof the lower insulating layer so as to have a width narrower than thatof the upper insulating layer, contact of the upper insulating layerformed of an organic material with the organic semiconductive film ismore reliably prevented.

[0176] In another embodiment of the present invention, the insulatingfilm formed so as to surround the region that forms the organicsemiconductive film includes a lower insulating layer formed of aninorganic material and an upper insulating layer, which is formed on aninner region of the lower insulating layer, and has a smaller width thanthat of the lower insulating layer. Thus, the thick insulating filmdisposed between the data line and the opposite electrode can preventformation of parasitic capacitance in the data line. Thus, the load onthe data line driving circuit can be reduced, resulting in lowerelectrical power consumption and improved display operation. When alower inorganic insulating film and an upper inorganic film are formedand when the upper insulating layer is patterned, the lower insulatinglayer functions as an etching stopper. Thus, overetching which woulddamage the pixel electrode does not occur. After patterning of the upperinsulating layer, only a single layer of the lower insulating layer isetched in the succeeding patterning. Thus, the etching is readilycontrolled and overetching which would damage the pixel electrode doesnot occur.

What is claimed is:
 1. An active matrix display device, comprising: asubstrate; a display region including a plurality of scanning linesprovided on the substrate, a plurality of data lines extending in adirection perpendicular to a direction of extension of the scanninglines, and a plurality of pixels arranged in a matrix bounded by thedata lines and the scanning lines, each of the pixels being providedwith a thin film luminescent device having: a conduction control circuithaving a thin film transistor including a gate electrode, the conductioncontrol circuit supplying a scanning signal to the gate electrodethrough one of the scanning lines, a pixel electrode, an organicsemiconductive film deposited above the pixel electrode, and an oppositeelectrode deposited above the organic semiconductive film, the thin filmluminescent device emitting light based on an image signal supplied fromone of the data lines through the conduction control circuit; and aninsulating film, a region in which the organic semiconductive film isformed being divided by the insulating film, the insulating film beingthicker than the organic semiconductive film, the insulating filmincluding a lower insulating layer which is formed of an inorganicmaterial and which is thicker than the organic semiconductive film, andan upper insulating layer which is deposited on the lower insulatinglayer and which is formed of an organic material.
 2. The active matrixdisplay device according to claim 1, the upper insulating layer beingdeposited in an inner region of the lower insulating layer so as to havea width narrower than a width of the lower insulating layer.
 3. Anactive matrix display device, comprising: a substrate; a display regionincluding a plurality of scanning lines provided on the substrate, aplurality of data lines extending in a direction perpendicular to adirection of extension of the scanning lines, and a plurality of pixelsarranged in a matrix bounded by the data lines and the scanning lines,each of the pixels being provided with a thin film luminescent devicehaving: a conduction control circuit having a thin film transistorincluding a gate electrode the conduction control circuit supplying ascanning signal to the gate electrode through one of the scanning lines,a pixel electrode, an organic semiconductive film deposited above thepixel electrode, and an opposite electrode deposited above the organicsemiconductive film, the thin film luminescent device emitting lightbased on an image signal supplied from one of the data lines through theconduction control circuit; and an insulating film, a region in whichthe organic semiconductive film is formed being divided by theinsulating film, the insulating film being thicker than the organicsemiconductive film, the insulating film including a lower insulatinglayer which is formed of an inorganic material, and an upper insulatinglayer which is formed of an inorganic material and which has a widthwhich is narrower than a width of the lower insulating layer.
 4. Theactive matrix display device according to claim 3, the conductioncontrol circuit being provided with a first TFT that supplies thescanning signal to the gate electrode, and a second TFT, the gateelectrode being connected to the data line through the first TFT; andthe second TFT and the thin film luminescent device being connected inseries between a common feed line, formed in addition to the data lineand the scanning line that supplies a drive current, and the oppositeelectrode.
 5. The active matrix display device according to claim 4, theinsulating film being used as a bank layer which prevents bleeding of adischarged solution when the organic semiconductive film is formed by anink-jet process in a region bounded by the insulating film.
 6. Theactive matrix display device according to claim 5, the insulating filmhaving a thickness of at least 1 μm.
 7. The active matrix display deviceaccording to claim 6, a region, overlapping an area in which theconduction control circuit is formed, in a region in which the pixelelectrode is formed, is covered with the insulating film.
 8. The activematrix display device according to claim 7, corners bounded by theinsulating film being rounded.
 9. The active matrix display deviceaccording to claim 4, the lower insulating layer of the insulating filmbeing formed so as to cover an area in which the conduction controlcircuit is formed, in a region in which the pixel electrode, the dataline, the common feed line, and the scanning line are formed, whereasthe upper insulating layer being formed so as to form a striped patternalong the data line; and the organic semiconductive film being formed ina region bounded by the striped pattern of the upper insulating layer.10. The active matrix display device according to claim 9, anoverlapping section in which the lower insulating layer overlaps theupper insulating layer being used as a bank layer to prevent bleeding ofa discharged solution when the luminescent thin film is formed by anink-jet process.
 11. The active matrix display device according to claim10, the overlapping section of the lower insulating layer and the upperinsulating layer having a thickness of at least 1 μm.
 12. The activematrix display device according to claim 11, the insulating film havinga first discontinuities portion so that opposite electrodes of adjacentpixels are connected to each other at flat sections formed by the firstdiscontinuities portion.
 13. The active matrix display device accordingto claim 12, the insulating film being formed along the data line andthe scanning line so as to surround the region in which the organicsemiconductive film is formed, and the first discontinuities portionbeing formed between the adjacent pixels in the direction of extensionof the data line and in the direction of extension of the scanning line.14. The active matrix display device according to claim 12, theinsulating film being formed along the data line and the scanning lineso as to surround the region in which the organic semiconductive film isformed, and the first discontinuities portion being formed between theadjacent pixels in the direction of extension of the scanning line. 15.The active matrix display device according to claim 12, the insulatingfilm being formed along the data line and the scanning line so as tosurround the region in which the organic semiconductive film is formed,and the first discontinuities portion being formed between the adjacentpixels in the direction of extension of the data line.
 16. The activematrix display device according to claim 12, the insulating filmextending in a striped pattern along the data line, and the firstdiscontinuities portion being formed on at least one end in theextending direction.
 17. The active matrix display device according toclaim 12, a periphery of the display section being provided with a dataline driving circuit that supplies data signals through the data lines,and a scanning line driving circuit that supplies scanning signalsthrough the scanning lines, the insulating film being also formed abovethe scanning line driving circuit and the data line driving circuit, andthe insulating film having a second discontinuities portion at aposition between a region in which the scanning line driving circuit isformed and a region in which the data line driving circuit is formed, sothat the opposite electrodes at the display section and at theperipheral section of the substrate are connected through the flatsection which does not have a step formed by the insulating film. 18.The active matrix display device according to claim 17, the lowerinsulating layer and the upper insulating layer both having thediscontinuities portion.
 19. The active matrix display device accordingto claim 17, only the upper insulating layer among the lower insulatinglayer and the upper insulating layer having the discontinuities portion.